Open AccessSpatially resolved opto‐electrical performance investigations of Cu 2 ZnSnS 3.2 Se 0.8 photovoltaic devices
Author(s) -
Neubauer Christian,
Samieipour Ali,
Oueslati Souhaib,
Ernits Kaia,
Meissner Dieter
Publication year - 2018
Publication title -
energy science and engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.638
H-Index - 29
ISSN - 2050-0505
DOI - 10.1002/ese3.232
Subject(s) - photocurrent , electroluminescence , copper indium gallium selenide solar cells , photovoltaics , materials science , optoelectronics , solar cell , photovoltaic system , wafer , electron beam induced current , microscopy , optics , nanotechnology , silicon , electrical engineering , physics , engineering , layer (electronics)
A new statistical analysis of spatially resolved photocurrent and electroluminescence images has been developed and applied to Cu 2 ZnSn(S x Se 1− x ) 4 ( CZTSS e) monograin solar cells. CZTSS e as an absorber material has the potential to significantly reduce manufacturing costs and develop new application fields in photovoltaics. Deep understanding of the performance related parameters in various production steps is crucial for further development of the technology. In this paper we show that by a thorough investigation by means of a combination of opto‐electrical measurement methods such as light beam induced current mapping, scanning electron microscopy, optical microscopy, photoluminescence, and electroluminescence measurements a correlation with different current‐voltage ( j / V ) measurement parameters can be established. Hereby, we clearly identify barrier variations at the active interface as the main reason for current variations across the cell, which for record cells can largely be avoided. These variations show up clearly in the microscopic spatial analysis developed. The detailed analysis of the homogeneity of the solar cell photocurrent presented in this study is relevant for all kinds of solar cells including thin‐film and wafer‐based cells.