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Comparative studies of metal‐organic decomposed Ga x Ce y O z and CeO 2 based functional MOS capacitor
Author(s) -
Tan Kar Yeow,
Megat Abdul Hedei Puteri Haslinda,
Mohd Zabidi Ainita Rozati,
Ahmad Farah Hayati,
Abdul Shekkeer Kammutty Musliyarakath,
Lau Khai Shenn,
Lim Way Foong,
Hassan Zainuriah,
Quah Hock Jin
Publication year - 2021
Publication title -
international journal of energy research
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.808
H-Index - 95
eISSN - 1099-114X
pISSN - 0363-907X
DOI - 10.1002/er.6952
Subject(s) - passivation , annealing (glass) , analytical chemistry (journal) , oxygen , chemistry , diffraction , electric field , metal , materials science , layer (electronics) , nanotechnology , optics , physics , organic chemistry , chromatography , composite material , quantum mechanics
Summary A comparison between metal‐organic decomposed Ga x Ce y O z and CeO 2 passivation layers subjected to post‐deposition annealing at 800°C in oxygen ambient was presented. Mitigation in the formation of positively charged oxygen vacancies in Ga x Ce y O z layer was disclosed by the grazing incidence X‐ray diffraction characterization as well as the acquisition of a lower value of positive effective oxide charge (Q eff ) than CeO 2 layer. In addition, Ga x Ce y O z layer was able to sustain a higher electric breakdown field and a lower leakage current density due to the attainment of a lower interface trap density extracted using Terman's and high‐low methods, slow trap density, and Q eff when compared with CeO 2 layer.