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Modelling and comparative performance analysis of tin based mixed halide perovskite solar cells with IGZO and CuO as charge transport layers
Author(s) -
Deepthi Jayan K.,
Sebastian Varkey
Publication year - 2021
Publication title -
international journal of energy research
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.808
H-Index - 95
eISSN - 1099-114X
pISSN - 0363-907X
DOI - 10.1002/er.6909
Subject(s) - materials science , tin , perovskite (structure) , energy conversion efficiency , equivalent series resistance , halide , dopant , band gap , photovoltaic system , work function , optoelectronics , perovskite solar cell , layer (electronics) , doping , nanotechnology , chemistry , voltage , electrical engineering , inorganic chemistry , crystallography , metallurgy , engineering
Summary n this study, SCAPS 1D software package is used for modelling tin based mixed halide perovskite solar cells (PSCs) with IGZO and CuO as electron transport material and hole transport material, respectively. Photovoltaic performance parameters of these PSCs are compared to that of pure lead based and lead‐free PSCs with the same charge transport layers. The study shows that the pure tin‐based PSCs are superior in performance to other device configurations. IGZO and CuO are found to be better substitutes for the commonly used unstable and expensive transport layers, TiO 2 and SpiroMeOTAD. The study also shows that back metal contacts with work function above 5.5 eV provides stable performance parameters. The study includes an analysis of the influence of various input parameters of the perovskite absorber layer‐ thickness, dopant concentration, total defect density, band gap and electron affinity‐ on the photovoltaic performance parameters. PSCs with MASnI 3 as absorber layer show the best performance with a fill factor (FF) and a power conversion efficiency (PCE) of 68.38% and 25.08%, respectively. The effect of internal resistances and temperature dependence are also analysed. For PSCs with single halide perovskites as absorber layer, even a low value of series resistance of 5 Ω cm 2 degrades the performance of the device and a large value of shunt resistance of 5000 Ω cm 2 enhances the performance parameters of the device.