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Comparative study of oxidizing ambient infused with varying nitrogen flow rates for fabrication of ternary nitrided AlZrO based MOS capacitor
Author(s) -
Quah Hock Jin,
Hassan Zainuriah,
Lim Way Foong
Publication year - 2020
Publication title -
international journal of energy research
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.808
H-Index - 95
eISSN - 1099-114X
pISSN - 0363-907X
DOI - 10.1002/er.6037
Subject(s) - materials science , oxidizing agent , nitrogen , nitriding , forming gas , oxide , analytical chemistry (journal) , oxygen , ternary operation , chemical engineering , chemistry , nanotechnology , composite material , layer (electronics) , annealing (glass) , metallurgy , chromatography , organic chemistry , computer science , engineering , programming language
Summary High dielectric constant nitrided aluminum zirconium oxide films were successfully fabricated on silicon substrate via an oxidation process infused with different nitrogen gas flow rates at 800°C. The presence of nitrogen piling up at the interface could control the thickness of interfacial layer formation. An increase in the nitrogen gas flow rate might be effective in controlling the overall thickness of the films, yet the nitrogen piling up at the interface impeded the diffusion of oxygen to the interface. Consequently, the interface quality was affected, leading to degradation in the interface‐state density. In addition, the generation of oxygen vacancies in the films, as well as the presence of nitrogen at the interstitial sites, would create a lattice polarization, which decreased the k values. Corresponding effects were also discussed in corroboration with energy band gap, effective oxide charges, and slow trap density, as well as interface‐state density calculated from capacitance and conductance methods.