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Gamma‐ray radiation on P‐doped Si nanoparticles towards the Li + ‐storage performances
Author(s) -
Guo Cong,
Qian Chengfei,
Li Min,
Li Jingfa
Publication year - 2020
Publication title -
international journal of energy research
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.808
H-Index - 95
eISSN - 1099-114X
pISSN - 0363-907X
DOI - 10.1002/er.5438
Subject(s) - doping , radiation , nanoparticle , materials science , x ray , radiochemistry , physics , optoelectronics , nanotechnology , nuclear physics , chemistry
Summary The high theoretical capacity of Si makes it a promising anode material for lithium ion batteries. However, the poor electrical conductivity and large volume expansion during lithiation/delithiation hinders its electrochemical performances. Herein, we report a γ irradiation treatment method to prepare P‐doped Si nanoparticles. The sample exhibits a capacity of 1698 mAh/g at 0.1 C rate after 100 cycles, which is about 3 times larger than that of undoped Si. The rate performance of γ irradiated P‐doped Si is also highly improved when compared to P‐doped Si without γ irradiation treatment. The enhanced performance can be attributed that γ irradiation can facilitate the phosphorus doping into Si lattice, which can enhance the electrical conductivity of Si.