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Synthesis of in situ N‐, S‐, and B‐doped few‐layer graphene by chemical vapor deposition technique and their superior glucose electrooxidation activity
Author(s) -
Caglar Aykut,
Ulas Berdan,
Sahin Ozlem,
Kıvrak Hilal
Publication year - 2019
Publication title -
international journal of energy research
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.808
H-Index - 95
eISSN - 1099-114X
pISSN - 0363-907X
DOI - 10.1002/er.4817
Subject(s) - graphene , raman spectroscopy , x ray photoelectron spectroscopy , materials science , graphene oxide paper , chemical vapor deposition , doping , indium tin oxide , indium , graphene nanoribbons , cyclic voltammetry , electrode , dielectric spectroscopy , oxide , analytical chemistry (journal) , nanotechnology , layer (electronics) , chemical engineering , electrochemistry , chemistry , optoelectronics , organic chemistry , optics , engineering , physics , metallurgy
Summary At present, N‐, S‐, and B‐doped grapheme‐modified indium tin oxide (ITO) electrodes are produced and doping method effect on the glucose electrooxidation is investigated. Firstly, few‐layer graphene is produced by chemical vapor deposition (CVD) method. Then, N, S, and B doping is carried out after graphene produced by CVD to prepare N‐doped, B‐doped, and S‐doped few‐layer graphene. N, S, and B doping is carried out by two different ways as (a) doping after synthesis of few‐layer graphene and (b) in situ doping during few‐layer graphene production. These materials are characterized by X‐ray diffraction, scanning electron microscopy‐energy (SEM), Raman spectroscopy, and X‐ray photoelectron spectroscopy (XPS). One could note that graphene and nitrogen networks are clearly visible from SEM images. Raman spectra show that B, N, and S are doped on few‐layer graphene/ITO successfully. XPS results of graphene, N‐doped graphene, and in situ N‐doped graphene reveal that graphene and nitrogen atoms used in the preparation of the electrodes obtain mainly in their elemental state. Then, these N‐, S‐, B‐doped and in situ N‐, S‐, B‐doped few‐layer graphene materials are coated onto indium tin oxide (ITO) to obtain N‐, S‐, B‐doped and in situ N‐, S‐, B‐doped ITO electrodes for glucose (C 6 H 12 O 6 ) electrooxidation. C 6 H 12 O 6 electrooxidation measurements are investigated with cyclic voltammetry, chronoamperometry, and electrochemical impedance spectroscopy measurements. As a result, in situ N‐doped few‐layer graphene/ITO electrode displays the best C 6 H 12 O 6 electrooxidation activity with 9.12 mA.cm −2 current density compared with other N‐, S‐, B‐doped graphene and in situ doped S and B grapheme‐modified ITO electrodes. Furthermore, this current density value for in situ N‐doped few‐layer graphene/ITO is highly above the values reported in the literature. In situ N‐doped few‐layer graphene/ITO electrode is a promising electrode for C 6 H 12 O 6 electrooxidation because it exhibits the best electrocatalytic activity, stability, and resistance compared with other electrodes.