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Influence of promoted 5%Ni/MCM‐41 catalysts on hydrogen yield in CO 2 reforming of CH 4
Author(s) -
Ibrahim Ahmed A.,
AlFatesh Ahmed A.,
Atia Hanan,
Fakeeha Anis H.,
Kasim Samsudeen O.,
Abasaeed Ahmed E.
Publication year - 2018
Publication title -
international journal of energy research
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.808
H-Index - 95
eISSN - 1099-114X
pISSN - 0363-907X
DOI - 10.1002/er.4156
Subject(s) - catalysis , hydrogen , yield (engineering) , hydrogen production , mesoporous material , materials science , carbon fibers , chemical engineering , chemistry , inorganic chemistry , nuclear chemistry , metallurgy , organic chemistry , composite number , engineering , composite material
Summary The modern world needs to find an alternative fuel that can replace the nonrenewable fossil fuels. Being versatile, sustainable, efficient, and clean energy carrier, hydrogen has the potential to play that role. Contrasted to conventional hydrocarbon fuels, hydrogen has high energy yield per unit mass. CO 2 reforming of CH 4 is a progressing technology for hydrogen production. Ni promoted with Ga, Gd, Sc, Ce, or Cs supported on mesoporous silica MCM‐41 catalysts were synthesized via an impregnation technique. To the best of our knowledge, the use of such promoters with Ni supported on MCMC‐41 has not been yet explored in the literature. H 2 ‐TPR, XRD, TGA, and TEM were used to characterize and explain the catalytic performance of 5%Ni + 1%x/MCM‐41 (x = Ga, Gd, Sc, Ce, or Cs) catalysts for the production of synthesis gas. The prepared catalysts preserved the ordered mesoporous structures of MCM‐41. Promoters increased the metal‐support interactions; moreover, Gd, Sc, Cs, or Ce‐promoted catalysts yielded the lowest amounts of carbon deposition. Promoting with 1% of Ga, Gd, or Ce improved CH 4 and CO 2 conversions by 38%. On the other hand, 1% Sc or Cs reduced CH 4 conversion by 18% and 93% respectively, and CO 2 conversions by 16% and 92% respectively. The results showed that the maximum H 2 yield followed the order 1% Ga (90%) > 1% Ce (84%) > 1% Gd (74%).