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Effect of temperature on dark current characteristics of silicon solar cells and diodes
Author(s) -
Radziemska Ewa
Publication year - 2006
Publication title -
international journal of energy research
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.808
H-Index - 95
eISSN - 1099-114X
pISSN - 0363-907X
DOI - 10.1002/er.1113
Subject(s) - diode , equivalent series resistance , overheating (electricity) , silicon , materials science , optoelectronics , solar cell , voltage , electrical engineering , engineering
The influence of temperature on the dark forward current–voltage characteristics of a single crystalline silicon solar cell and a small silicon diode within the range from 295–373 K has been analysed. It was shown that the forward voltage of the solar cell degrades 2 mV and in the case of diode 1 mV per 1 K temperature increases at constant forward current of 100 mA. Thermal resistance and heat transfer from the solar cell by using a thick copper plate as a heat sink have also been discussed. For the series resistance determination the current–voltage I – U characteristics of single crystalline silicon solar cells in different temperatures were measured in the dark. It was proved that series resistance of the silicon solar cells and diodes is temperature dependent and increases with temperature increase 0.65% K −1 . Therefore, protection of silicon solar cells as well as silicon diodes against overheating is essential during their exploitation. Copyright © 2005 John Wiley & Sons, Ltd.