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Diethylammonium Iodide Assisted Grain Growth with Sub‐Grain Cluster to Passivate Grain Boundary for CH 3 NH 3 PbI 3 Perovskite Solar Cells
Author(s) -
Xiao Lan,
Wang Zhengchun,
Wu Tong,
Qin Pingli,
Yu Xueli,
Xiong Lun,
Ma Liang,
Li Haixia,
Chen Xiangbai
Publication year - 2020
Publication title -
energy technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.91
H-Index - 44
eISSN - 2194-4296
pISSN - 2194-4288
DOI - 10.1002/ente.202000412
Subject(s) - passivation , grain boundary , perovskite (structure) , materials science , crystallization , energy conversion efficiency , grain size , grain growth , chemical engineering , iodide , nucleation , chlorobenzene , mineralogy , inorganic chemistry , nanotechnology , layer (electronics) , chemistry , metallurgy , catalysis , optoelectronics , microstructure , organic chemistry , engineering
A template‐agent can affect defect formation as well as influence interface properties, due to the rapid growth of perovskite film from the solution. Herein, diethylammonium iodide (DAI) is used as an effective template‐agent to control the perovskite crystallization during preparation. It is found that a very small amount of DAI in chlorobenzene (CB) can slow down the perovskite growth of the CH 3 NH 3 PbI 3 (MAPbI 3 ) film with more large grain size and compacted crystal‐grains resulting in the lesser grain boundaries (GBs) in favor of carrier transport in perovskite solar cells (PSCs). Moreover, some redundant PbI 2 can be digested to form DA 2 PbI 4 . One part of DA 2 PbI 4 can form the sub‐grains with the composition of (DA 2 PbI 4 ) 0.2 (PbI 2 ) 0.8 to passivate the GB defects, and other part can cover the surface to passivate the surface defects in large MAPbI 3 grains. Using an optimized DAI concentration of 0.5 mg mL −1 in CB solution, the corrsponding MAPbI 3 PSC achieves an increased power conversion efficiency of 20.31% with suppressed current–voltage hysteresis. This DAI passivation strategy provides a simple approach to effectively assist the grain‐growth for improved device performance.