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Multilayer Graphite–Ga 68.5 In 21.5 Sn 10 Composites as Highly Thermal Conductive and Low‐Cost Material
Author(s) -
Qiu Wangkang,
Ou Meilian,
Huang Kaiyuan,
Chu Sheng
Publication year - 2020
Publication title -
energy technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.91
H-Index - 44
eISSN - 2194-4296
pISSN - 2194-4288
DOI - 10.1002/ente.202000240
Subject(s) - materials science , graphite , thermal conductivity , composite number , electrical conductor , thermal management of electronic devices and systems , composite material , interfacial thermal resistance , thermal , electronics , dissipation , semiconductor , layer (electronics) , thermal resistance , optoelectronics , mechanical engineering , electrical engineering , thermodynamics , physics , engineering
With the emergence of numerous capabilities, electronic devices with high‐frequency central processing units (CPUs) are achieving high performance. In the meantime, immense heat generated in a conned space makes the cooling of semiconductor circuits a critical challenge. People are looking for ways to improve the heat dissipation capacity of commercial graphite films (GFs), as the thicknesses of the synthetic GFs are limited to below 20 μm. Herein, a new strategy utilizing liquid Galinstan (GaInSn) with high thermal conductivity (TC) as interfacial layers between GFs to reduce thermal resistance is proposed. Through numerical simulation and experimental verification, it is found that the multilayer GF–GaInSn composite films reveal strongly enhanced heat conducting properties compared with commercial GF. The resulting five‐layer GF–GaInSn composite exhibits superior equivalent TC at room temperature along the α ‐axis ( K RT = 1809.05 ± 68.66 W m −1 K −1 ). The presence of GaInSn enables the heat to diffuse unimpeded onto graphite of each layer, endowing the composites with potential application in electronic devices for advanced thermal management.