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Defect‐Rich Graphene Architecture Induced by Nitrogen and Phosphorus Dual Doping for High‐Performance Supercapacitors
Author(s) -
Wang Chaonan,
Luo Shengyun,
Yang Yinye,
Ren Dasen,
Yu Xu
Publication year - 2020
Publication title -
energy technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.91
H-Index - 44
eISSN - 2194-4296
pISSN - 2194-4288
DOI - 10.1002/ente.201900685
Subject(s) - heteroatom , supercapacitor , graphene , materials science , electrochemistry , capacitance , nanotechnology , doping , chemical engineering , electrode , chemistry , optoelectronics , organic chemistry , ring (chemistry) , engineering
Heteroatom modification of graphene is a promising strategy to improve the electrochemical performance of supercapacitors. Herein, the heteroatom (N and P) dual‐doped reduced graphene architecture (NP‐rGA) is constructed via the combination of ice‐template and thermal activation approaches. The interconnected morphology and surface chemical state of NP‐rGA is confirmed by various microscopic and spectroscopic analyses. The formation of N‐ and P‐containing functional groups acts as primary electroactive sites for the fast accommodation/relaxation of protons or electrons. Furthermore, NP‐rGA exhibits a significant improvement in pseudocapacitive behavior in contrast to rGA, such as high specific capacitance (307.8 F g −1 ), excellent rate capability (85.7%), and cyclic stability of 100.1% of its initial cycle. These excellent electrochemical evidences can be assigned to the synergistic effect of hierarchical structure and uniform heteroatom (N and P) doping.