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Improving the Performance of Perovskite Solar Cells Through Solvent Vapor Annealing‐based Morphology Control of the Hole‐Transport Layer
Author(s) -
Liu Guanchen,
Xie Xiaoyin,
Zeng Fanming,
Liu Zhihai
Publication year - 2018
Publication title -
energy technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.91
H-Index - 44
eISSN - 2194-4296
pISSN - 2194-4288
DOI - 10.1002/ente.201800066
Subject(s) - energy conversion efficiency , annealing (glass) , materials science , chemical engineering , solvent , perovskite (structure) , hysteresis , layer (electronics) , open circuit voltage , optoelectronics , nanotechnology , chemistry , voltage , composite material , organic chemistry , electrical engineering , physics , quantum mechanics , engineering
In this work, we improved the performance of perovskite solar cells (PSCs) by controlling the morphology of 2,2′,7,7′‐tetrakis‐( N , N ‐di‐ p ‐methoxyphenylamine)‐9,9′‐spirobifluorene (spiro‐OMeTAD) layers using a solvent vapor annealing method. We found that this technique could result in a smoother morphology of the spiro‐OMeTAD layer, which further improved the contacts at the perovskite/spiro‐OMeTAD and spiro‐OMeTAD/Au interfaces. Consequently, the power conversion efficiency (PCE) of PSCs improved from 14.62 to 16.73 % along with simultaneous enhancements of the open‐circuit voltage, short‐circuit current density, and fill factor. The hysteresis of the PSCs decreased significantly from 4.4 to 0.6 %. Moreover, the degradation in the PCE of the PSCs for long‐term storage was reduced from 19 to 14 % over the period of 144 hours. The best PSC based on a solvent vapor‐annealed spiro‐OMeTAD layer exhibited a high PCE of 17.15 % with a stable power output. Our results indicate that using solvent vapor annealing to control the morphology of spiro‐OMeTAD layers is an effective method for fabricating high‐performance PSCs.

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