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Interface Engineering of electron Transport Layer‐Free Planar Perovskite Solar Cells with Efficiency Exceeding 15 %
Author(s) -
Huang Feiyue,
Wei Yuelin,
Gu Lin,
Guo Qiyao,
Xu Hui,
Luo Dan,
Jin Shao,
Yang Xiaomin,
Huang Yunfang,
Wu Jihuai
Publication year - 2017
Publication title -
energy technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.91
H-Index - 44
eISSN - 2194-4296
pISSN - 2194-4288
DOI - 10.1002/ente.201700437
Subject(s) - perovskite (structure) , tin oxide , materials science , energy conversion efficiency , doping , layer (electronics) , oxide , optoelectronics , planar , chemical engineering , nanotechnology , computer graphics (images) , computer science , engineering , metallurgy
Abstract A high‐performance electron transport layer (ETL)‐free planar fluorine‐doped tin oxide (FTO)/perovskite/hole‐transport material/Au solar cell was prepared. We revealed that a plasma‐cleaning pretreatment for FTO substrates could significantly improve the quality of perovskite films, leading to the promotion of charge separation, an increase in the electron‐transport rate, and a decrease in the recombination reaction at the FTO/perovskite interface. Finally, the efficiency of the cells was greatly improved. A power conversion efficiency of over 15 % and a fill factor of 0.68 were achieved under AM 1.5G 100 mW cm −2 irradiation without the use of a compact n‐type metal‐oxide blocking layer.