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Thermoelectric Properties of Indium(III)‐Doped Copper Antimony Selenide Thin Films Deposited Using a Microwave‐Assisted Technique
Author(s) -
Ghanwat Vishvanath B.,
Mali Sawanta S.,
Bagade Chaitali S.,
Mane Rahul M.,
Hong Chang Kook,
Bhosale P. N.
Publication year - 2016
Publication title -
energy technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.91
H-Index - 44
eISSN - 2194-4296
pISSN - 2194-4288
DOI - 10.1002/ente.201500508
Subject(s) - thermoelectric effect , materials science , seebeck coefficient , thin film , doping , indium , thermoelectric materials , optoelectronics , figure of merit , electrical resistivity and conductivity , electronic engineering , thermal conductivity , nanotechnology , composite material , electrical engineering , physics , engineering , thermodynamics
The improvement of the thermoelectric performance of semiconducting chalcogenides is an important task. The principal challenge in this field is to tailor the thermoelectric properties, such as electrical conductivity, Seebeck coefficient, and thermal conductivity, to improve the figure of merit (ZT). Herein, we present an improvement in the thermoelectric properties of In III ‐doped p‐type Cu 3 SbSe 4 thin films deposited by using a microwave‐assisted technique. The deposited thin films were characterized for their optical, structural, morphological, compositional, and electrical transport properties to show the applicability of the materials in thermoelectric energy conversion. The improvement in ZT is achieved with In III doping because of the enhancement in the charge carrier density of Cu 3 SbSe 4 thin films. A maximum ZT of 0.183 was achieved for Cu 3 (Sb 0.94 In 0.06 )Se 4 at 300 K. Our results show that this deposition strategy and doping process can provide an effective solution to fabricate Cu 3 SbSe 4 ‐based materials for thermoelectric applications.