Premium
Fabrication and Photovoltaic Properties of Silicon Solar Cells with Different Diameters and Heights of Nanopillars
Author(s) -
Liu Jing,
Zhang Xinshuai,
Ashmkhan Marina,
Dong Gangqiang,
Liao Yuanxun,
Wang Bo,
Zhang Tianchong,
Yi Futing
Publication year - 2013
Publication title -
energy technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.91
H-Index - 44
eISSN - 2194-4296
pISSN - 2194-4288
DOI - 10.1002/ente.201200031
Subject(s) - nanopillar , materials science , silicon , optoelectronics , nanosphere lithography , quantum efficiency , photovoltaic system , etching (microfabrication) , energy conversion efficiency , solar cell , open circuit voltage , fabrication , optics , layer (electronics) , nanotechnology , nanostructure , voltage , medicine , ecology , alternative medicine , physics , pathology , quantum mechanics , biology
Silicon nanopillars with average diameters from 200 to 900 nm and heights from 0.5 to 3 μm have been successfully fabricated by cesium chloride (CsCl) self‐assembly lithography and dry etching as antireflection layer for solar cells. The antireflection and photovoltaic characteristics for the structures of silicon nanopillars have been researched and show that the reflectivity, photovoltaic conversion efficiency (PCE), and external quantum efficiency (EQE) are greatly influenced by the average diameter and height of nanopillars. The nanopillars with small diameters and large heights can supress reflection, but have less‐favorable photovoltic properties because of greater surface recombination and a greater number of lattice defects. The lowest reflectivity was achieved for silicon nanopillars of 200 nm average diameter and 1.5 μm height, for which the reflectivity was below 5 % between the wavelengths of 400 and 1000 nm, and the solar cell with silicon nanopillars of 600 nm average diameter and 1.5 μm height exhibited the best solar cell performance with a PCE of 14.83 %, a short‐circuit current density ( J sc ) of 36.89 mA cm −2 , and an open‐circuit voltage ( V oc ) of 542 mV.