Open AccessImpact of high mobility III‐V compound material of a short channel thin‐film SiGe double gate junctionless MOSFET as a source
Author(s) -
Rout Soumendra P.,
Dutta Pradipta
Publication year - 2020
Publication title -
engineering reports
Language(s) - English
Resource type - Journals
ISSN - 2577-8196
DOI - 10.1002/eng2.12086
Subject(s) - materials science , mosfet , doping , gate dielectric , optoelectronics , high κ dielectric , dielectric , electron mobility , controllability , transistor , electrical engineering , analytical chemistry (journal) , chemistry , voltage , engineering , mathematics , chromatography
In recent years, technology has embraced the use of Junctionless Double Gate Metal‐Oxide‐Semiconductor Field‐Effect Transistors (JL DGMOSFET) to reduce Short Channel Effects (SCEs). This research presents a novel JL DGMOSFET based on a highly doped N‐type SiGe in which an III‐V compound material is used at source regime. The III‐V compound material GaSb with higher mobility and higher injection velocity is used as source material, whereas SiGe is considered for both channel and drain materials to produce a higher output current and low leakage current for the N channel JL DGMOSFET. In addition, high‐k dielectric material HfO 2 is employed to improve the controllability of the gate at 20 nm channel length. Different parameters, such as I d , SS, g m , TGF, I on / I off ratio, C gs , and f T of a Symmetric JL DGMOSFET are studied and compared to existing works. The comparison shows that the proposed JL DGMOSFET outperforms the existing state of knowledge. The analysis is also being extended by including the trap charge for the symmetric JL DGMOSFET. Parametrically, the asymmetrical structure is finally studied. The proposed structure yields a higher I d of 40 mA, SS of 60.25 mV/decade, g m of 0.148 A/V, TGF of 3.69 V‐1, I on / I off ratio of 3.41 × 10 13 , C gs of 3.78 × 10 −16 F and f T of 1.19 × 10 13 Hz, hence indicating an improved RF and DC analysis.