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Synthesis of g‐C 3 N 4 /InVO 4 Semiconductor for Improved Photocatalytic and Photoelectrochemical Applications
Author(s) -
Sariket Debasis,
Ray Debasish,
Baduri Swarnendu,
Ghosh Sangeeta,
Maity Arjun,
Bhattacharya Chinmoy
Publication year - 2020
Publication title -
electroanalysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.574
H-Index - 128
eISSN - 1521-4109
pISSN - 1040-0397
DOI - 10.1002/elan.202060161
Subject(s) - photocatalysis , rhodamine b , materials science , photocurrent , carbon nitride , graphitic carbon nitride , bismuth vanadate , semiconductor , heterojunction , calcination , electrochemistry , photochemistry , chemical engineering , optoelectronics , chemistry , catalysis , electrode , organic chemistry , engineering
In this paper, graphite‐like carbon nitride‐indium vanadate (g‐C 3 N 4 /InVO 4 ) composites have been synthesized via a mixing‐calcination method. Physico‐chemical and photocatalytic experiments suggested that the optimized g‐C 3 N 4 /InVO 4 composite demonstrates highest photo‐activity in degrading Rhodamine B and para‐nitrophenol as target pollutants. The electrochemical impedance spectroscopic (Mott‐Schottky) analysis confirms n‐type semiconductivity for these materials whereas the composite material exhibited highest 13 μA/cm 2 photocurrent under periodic UV‐Visible irradiation for water oxidation. The relative band positions indicate inter‐band interactions between heterojunctions of g‐C 3 N 4 and InVO 4 facilitating the separation and migration of photogenerated electron‐hole pairs and a stable performance was reported.