Premium
Synthesis of g‐C 3 N 4 /InVO 4 Semiconductor for Improved Photocatalytic and Photoelectrochemical Applications
Author(s) -
Sariket Debasis,
Ray Debasish,
Baduri Swarnendu,
Ghosh Sangeeta,
Maity Arjun,
Bhattacharya Chinmoy
Publication year - 2020
Publication title -
electroanalysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.574
H-Index - 128
eISSN - 1521-4109
pISSN - 1040-0397
DOI - 10.1002/elan.202060161
Subject(s) - photocatalysis , rhodamine b , materials science , photocurrent , carbon nitride , graphitic carbon nitride , bismuth vanadate , semiconductor , heterojunction , calcination , electrochemistry , photochemistry , chemical engineering , optoelectronics , chemistry , catalysis , electrode , organic chemistry , engineering
In this paper, graphite‐like carbon nitride‐indium vanadate (g‐C 3 N 4 /InVO 4 ) composites have been synthesized via a mixing‐calcination method. Physico‐chemical and photocatalytic experiments suggested that the optimized g‐C 3 N 4 /InVO 4 composite demonstrates highest photo‐activity in degrading Rhodamine B and para‐nitrophenol as target pollutants. The electrochemical impedance spectroscopic (Mott‐Schottky) analysis confirms n‐type semiconductivity for these materials whereas the composite material exhibited highest 13 μA/cm 2 photocurrent under periodic UV‐Visible irradiation for water oxidation. The relative band positions indicate inter‐band interactions between heterojunctions of g‐C 3 N 4 and InVO 4 facilitating the separation and migration of photogenerated electron‐hole pairs and a stable performance was reported.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom