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Electrical and Sensing Properties of Single‐Walled Carbon Nanotubes Network: Effect of Alignment and Selective Breakdown
Author(s) -
Lim JaeHong,
Phiboolsirichit Nopparat,
Mubeen Syed,
Rheem Youngwoo,
Deshusses Marc A.,
Mulchandani Ashok,
Myung Nosang V
Publication year - 2010
Publication title -
electroanalysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.574
H-Index - 128
eISSN - 1521-4109
pISSN - 1040-0397
DOI - 10.1002/elan.200900314
Subject(s) - carbon nanotube , materials science , optoelectronics , electrical resistance and conductance , electrical breakdown , nanotechnology , scattering , electrical resistivity and conductivity , composite material , electrical engineering , optics , physics , engineering , dielectric
The electrical transport and NH 3 sensing properties of randomly oriented and aligned SWNT networks were presented and discussed. The results indicate that aligned SWNT‐FETs have better FET characteristics due to the reduced number of interconnected nodes. This was particularly true as the resistance of the devices increased. Gated electrical breakdown was implemented to selectively remove metallic (m‐) SWNTs, thereby reducing scattering centers. This technique provided significant improvements in FET characteristics resulting in greater on/off ratio (e.g. 10 4 ). AC dielectrophoretic alignment followed by selective electrical breakdown of m‐SWNTs can significantly enhance the semiconducting properties of SWNT networks which resulted in highly sensitive sensors.