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Detection of Explosives Using Field‐Effect Transistors
Author(s) -
Sharon Etery,
Freeman Ronit,
Willner Itamar
Publication year - 2009
Publication title -
electroanalysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.574
H-Index - 128
eISSN - 1521-4109
pISSN - 1040-0397
DOI - 10.1002/elan.200900271
Subject(s) - isfet , trinitrotoluene , detection limit , field effect transistor , acceptor , explosive material , transistor , materials science , optoelectronics , analytical chemistry (journal) , nanotechnology , chemistry , electrical engineering , chromatography , physics , voltage , organic chemistry , condensed matter physics , engineering
The gate surfaces of ion‐sensitive field‐effect transistor (ISFET) devices were functionalized with the π‐donor units, 6‐hydroxydopamine ( 1 ) or 4‐aminothiophenol ( 2 ). Concentration of trinitrotoluene, TNT, on the gate via π‐donor‐acceptor interactions yields charge‐transfer complexes that alter the gate potential. This enables the label‐free analysis of TNT with a detection limit corresponding to 1×10 −7 M.
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