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Quantized Double‐Layer Charging of Iron Oxide Nanoparticles on a‐Si:H Controlled by Charged Defects in a‐Si:H
Author(s) -
Weis Martin,
Gmucová Katarína,
Nádaždy Vojtech,
Capek Ignác,
Šatka Alexander,
Kopáni Martin,
Cirák Július,
Majková Eva
Publication year - 2007
Publication title -
electroanalysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.574
H-Index - 128
eISSN - 1521-4109
pISSN - 1040-0397
DOI - 10.1002/elan.200703858
Subject(s) - nanoparticle , layer (electronics) , materials science , silicon , double layer (biology) , electrode , oxide , amorphous solid , silicon oxide , amorphous silicon , analytical chemistry (journal) , biasing , cyclic voltammetry , iron oxide nanoparticles , nanotechnology , voltage , chemistry , electrochemistry , optoelectronics , crystalline silicon , crystallography , electrical engineering , organic chemistry , metallurgy , silicon nitride , engineering
Sequential single‐electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir‐Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film (a‐Si:H) is reported. Quantized double‐layer charging of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the excess of negative/positive charged defect states in the a‐Si:H layer. The particular charge states in a‐Si:H are created by the simultaneous application of a suitable bias voltage and illumination before the measurement.
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