Suspended gate field‐effect transistor sensitive to gaseous hydrogen cyanide | Zendy

Li Jing | Zendy; Petelenz Danuta | Zendy; Janata Jiří | Zendy

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Suspended gate field‐effect transistor sensitive to gaseous hydrogen cyanide

Author(s) -

Li Jing,

Petelenz Danuta,

Janata Jiří

Publication year - 1993

Publication title -

electroanalysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.574

H-Index - 128

eISSN - 1521-4109

pISSN - 1040-0397

DOI - 10.1002/elan.1140050912

Subject(s) - cyanide , transistor , hydrogen cyanide , polyaniline , field effect transistor , materials science , hydrogen , optoelectronics , hydrogen sulphide , analytical chemistry (journal) , chemistry , inorganic chemistry , chromatography , electrical engineering , organic chemistry , voltage , sulfur , polymer , composite material , polymerization , metallurgy , engineering

The optimization, characterization, and analytical performance of a suspended gate field‐effect transistor (SGFET), with a selective polyaniline/mercury layer, for monitoring low levels of hydrogen cyanide in air are described. Reversible and reproducible detection is reported.

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