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pH‐ISFET with NMOS technology
Author(s) -
Alegret S.,
Bartrolí J.,
Jiménez C.,
del Valle M.,
Domínguez C.,
Cabruja E.,
Merlos A.
Publication year - 1991
Publication title -
electroanalysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.574
H-Index - 128
eISSN - 1521-4109
pISSN - 1040-0397
DOI - 10.1002/elan.1140030418
Subject(s) - isfet , nmos logic , silicon nitride , materials science , field effect transistor , analytical chemistry (journal) , transistor , calibration , optoelectronics , silicon , nanotechnology , electrical engineering , chemistry , chromatography , voltage , mathematics , engineering , statistics
The construction of a pH‐ISFET (ion‐selective field effect transistor) fabricated with standard negative‐channel MOS technology, compatible with complementary MOS technology, and using silicon nitride as a pH‐sensitive material, is described. Its main analytical characteristics are discussed. The resulting calibration plot is linear over the pH range from 2 to 11; with a slope of 54 mV per pH unit.