pH‐ISFET with NMOS technology | Zendy

Alegret S. | Zendy; Bartrolí J. | Zendy; Jiménez C. | Zendy; del Valle M. | Zendy; Domínguez C. | Zendy; Cabruja E. | Zendy; Merlos A. | Zendy

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pH‐ISFET with NMOS technology

Author(s) -

Alegret S.,

Bartrolí J.,

Jiménez C.,

del Valle M.,

Domínguez C.,

Cabruja E.,

Merlos A.

Publication year - 1991

Publication title -

electroanalysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.574

H-Index - 128

eISSN - 1521-4109

pISSN - 1040-0397

DOI - 10.1002/elan.1140030418

Subject(s) - isfet , nmos logic , silicon nitride , materials science , field effect transistor , analytical chemistry (journal) , transistor , calibration , optoelectronics , silicon , nanotechnology , electrical engineering , chemistry , chromatography , voltage , mathematics , engineering , statistics

The construction of a pH‐ISFET (ion‐selective field effect transistor) fabricated with standard negative‐channel MOS technology, compatible with complementary MOS technology, and using silicon nitride as a pH‐sensitive material, is described. Its main analytical characteristics are discussed. The resulting calibration plot is linear over the pH range from 2 to 11; with a slope of 54 mV per pH unit.

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