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Transport Properties of GdTe 1.8– x As x ( x = 0, 0.04)
Author(s) -
Poddig Hagen,
Hobbis Dean,
Alzahrani Noha,
Doert Thomas,
Nolas George S.
Publication year - 2020
Publication title -
european journal of inorganic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.667
H-Index - 136
eISSN - 1099-0682
pISSN - 1434-1948
DOI - 10.1002/ejic.202000195
Subject(s) - crystallite , electrical resistivity and conductivity , chemistry , doping , seebeck coefficient , crystal structure , thermoelectric materials , thermoelectric effect , analytical chemistry (journal) , thermal conductivity , arsenic , thermal conduction , mineralogy , phase (matter) , crystallography , condensed matter physics , materials science , thermodynamics , composite material , physics , engineering , organic chemistry , chromatography , electrical engineering
Phase‐pure polycrystalline samples of GdTe 1.8 and GdTe 1.76 As 0.04 were synthesized by reacting Gd 2 Te 3 with elemental Te and As, employing a small amount of I 2 as mineralizer. Polycrystalline specimens were densified by SPS for temperature dependent electrical and thermal properties investigations. The electrical properties indicate that arsenic doping leads to a change from n‐ to p‐type conduction, with an order‐of‐magnitude reduction in resistivity with As doping at room‐temperature as compared to GdTe 1.8 . The thermal conductivity of both specimens is low, the result of the crystal structure and atypical Te bonding in this material. The results presented are intended to expand on the research into rare‐earth polychalcogenides and advance the fundamental investigation of these materials, as well as begin to evaluate their potential for thermoelectric applications.