Synthesis of a Novel Rocksalt‐Type Ternary Nitride Semiconductor MgSnN 2  Using the Metathesis Reaction Under High Pressure | Zendy

Kawamura Fumio | Zendy; Imura Masataka | Zendy; Murata Hidenobu | Zendy; Yamada Naoomi | Zendy; Taniguchi Takashi | Zendy

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Synthesis of a Novel Rocksalt‐Type Ternary Nitride Semiconductor MgSnN 2 Using the Metathesis Reaction Under High Pressure

Author(s) -

Kawamura Fumio,

Imura Masataka,

Murata Hidenobu,

Yamada Naoomi,

Taniguchi Takashi

Publication year - 2020

Publication title -

european journal of inorganic chemistry

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.667

H-Index - 136

eISSN - 1099-0682

pISSN - 1434-1948

DOI - 10.1002/ejic.202000019

Subject(s) - ternary operation , chemistry , cover (algebra) , nitride , semiconductor , salt metathesis reaction , metathesis , nanotechnology , chemical engineering , inorganic chemistry , optoelectronics , organic chemistry , mechanical engineering , polymer , materials science , layer (electronics) , computer science , engineering , polymerization , programming language

Invited for the cover of this issue is the group of Fumio Kawamura from the National Institute for Materials Science, Tsukuba, Ibaraki, Japan. The cover image shows a crystal of the ternary nitride semiconductor MgSnN 2 synthesized in this work, the SEM image of its powder, and a representative high‐pressure apparatus used in the laboratory.

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