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Synthesis of a Novel Rocksalt‐Type Ternary Nitride Semiconductor MgSnN 2 Using the Metathesis Reaction under High Pressure
Author(s) -
Kawamura Fumio,
Imura Masataka,
Murata Hidenobu,
Yamada Naoomi,
Taniguchi Takashi
Publication year - 2020
Publication title -
european journal of inorganic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.667
H-Index - 136
eISSN - 1099-0682
pISSN - 1434-1948
DOI - 10.1002/ejic.201901059
Subject(s) - wurtzite crystal structure , ternary operation , nitride , chemistry , semiconductor , cathodoluminescence , crystallinity , band gap , salt metathesis reaction , metathesis , optoelectronics , chemical engineering , crystallography , zinc , layer (electronics) , materials science , luminescence , polymer , organic chemistry , computer science , engineering , polymerization , programming language
Novel ternary nitride semiconductor MgSnN 2 was synthesized using the metathesis reaction under high pressure ( P = 5.5 GPa/ T = 850 °C/1 h). MgSnN 2 obtained in this study showed a rocksalt structure, although we have reported that ZnSnN 2 synthesized using a similar method has a wurtzite structure. The (111) plane of MgSnN 2 with a rocksalt structure is expected to match well with GaN (0001). The band gap of MgSnN 2 is estimated to be 2.3 eV and it shows a distinct cathodoluminescence peak at room temperature. MgSnN 2 can find potential use in photovoltaic absorber, in the emitting layer of a light‐emitting device, and photocatalyst or opaque pigment because the elements composing MgSnN 2 are nontoxic and earth‐abundant. MgSnN 2 powder synthesized in this study showed excellent crystallinity, proving that metathesis reaction under high pressure is a superior method for synthesizing novel multicomponent nitrides.