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In Situ Investigation of the Thermal Decomposition of Cl 4 (CH 3 CN)W(N i Pr) During Simulated Chemical Vapor Deposition
Author(s) -
Nolan Michelle M.,
Kim Seo Young,
Koley Arijit,
Anderson Tim,
McElweeWhite Lisa
Publication year - 2019
Publication title -
european journal of inorganic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.667
H-Index - 136
eISSN - 1099-0682
pISSN - 1434-1948
DOI - 10.1002/ejic.201900627
Subject(s) - chemical vapor deposition , chemistry , thermal decomposition , homolysis , raman spectroscopy , decomposition , tungsten , thin film , deposition (geology) , metalorganic vapour phase epitaxy , inorganic chemistry , chemical engineering , nanotechnology , organic chemistry , epitaxy , materials science , radical , layer (electronics) , paleontology , physics , engineering , sediment , optics , biology
Design of precursors for thin film growth by chemical vapor deposition (CVD) can be informed by knowledge of the precursor decomposition mechanism. However, the vast majority of decomposition characterization is done by techniques that do not capture CVD conditions. This work used a custom CVD reactor with in situ Raman spectroscopy capabilities to investigate the gas phase thermal decomposition of the tungsten imido complex Cl 4 (CH 3 CN)WN i Pr, a known precursor for the aerosol‐assisted (AA)CVD of tungsten carbonitride thin films. In combination with previous computational and ex situ data, we propose a decomposition mechanism for this precursor under CVD conditions, based on observation of gas phase products of N(imido)‐C bond homolysis and σ ‐bond metathesis between the precursor W–Cl bond and H 2 .