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Utility of ZnGa 2 O 4 Nanoparticles Obtained Hydrothermally for Preparation of GaN:ZnO Solid Solution Nanoparticles and Transparent Films
Author(s) -
Asakura Yusuke,
Nishimura Yukiho,
Masubuchi Yuji,
Yin Shu
Publication year - 2019
Publication title -
european journal of inorganic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.667
H-Index - 136
eISSN - 1099-0682
pISSN - 1434-1948
DOI - 10.1002/ejic.201900045
Subject(s) - nanoparticle , solid solution , chemical engineering , photocatalysis , materials science , photoluminescence , sputtering , nitriding , decomposition , thin film , nanotechnology , chemistry , optoelectronics , layer (electronics) , metallurgy , catalysis , organic chemistry , biochemistry , engineering
GaN:ZnO solid solution nanoparticles and films were synthesized by using ZnGa 2 O 4 nanoparticles with a particle size of below 25 nm obtained hydrothermally as a precursor. Nitridation of powder ZnGa 2 O 4 nanoparticles led to the formation of GaN:ZnO nanoparticles. The nitrided samples have higher specific surface area than those obtained by conventional method, which induces higher photocatalytic NO x decomposition activity. In addition, a transparent coating film with ZnGa 2 O 4 nanoparticles was converted to GaN:ZnO film after nitridation. The nitrided film absorbs UV and blue light and is transparent for light of wavelength over 500 nm (the transmittance is over 90 %). This means that the nitridation does not lead to the formation of scattering domains by the large‐size particles and cracks. This method for film preparation is much cheaper than conventional CVD and sputtering processes. These results strongly suggest the utility of ZnGa 2 O 4 nanoparticles not only for the formation of GaN:ZnO solid solution nanoparticles with high specific surface area but also for the preparation of transparent GaN:ZnO solid solution films.