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Correlation of Reduced Interlayer Charge Transfer with Antiphase Boundary Formation in Bi x Sn 1– x Se–NbSe 2 Heterostructures
Author(s) -
Mitchson Gavin,
Bauers Sage R.,
Schädlich Philip,
Ditto Jeffrey J.,
Johnson David C.
Publication year - 2017
Publication title -
european journal of inorganic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.667
H-Index - 136
eISSN - 1099-0682
pISSN - 1434-1948
DOI - 10.1002/ejic.201601401
Subject(s) - chemistry , heterojunction , scanning transmission electron microscopy , crystallography , transmission electron microscopy , grain boundary , condensed matter physics , microstructure , nanotechnology , materials science , physics
Heterostructures of alloyed Bi x Sn 1– x Se layers, 0 ≤ x ≤ 1.0, interleaved with NbSe 2 monolayers, were prepared by using the modulated elemental reactants technique to investigate the occurrence of antiphase boundaries as a function of Bi concentration. A Rietveld refinement of the c ‐axis structure of the x = 0.50 compound revealed a reduced gap distance between the Bi plane in the Bi x Sn 1– x Se layers and the Se plane in the NbSe 2 layers and an increased internal Se–Se plane spacing within the Bi x Sn 1– x Se layers relative to the end member compounds, suggesting increased interaction between the layers at this composition. High‐angle annular dark‐field scanning transmission electron microscopy (HAADF STEM) images showed no antiphase boundary formation in the Bi x Sn 1– x Se layers for x = 0.24, some antiphase boundary formation when x = 0.50, and increased antiphase boundary formation for x = 0.73. Correlated with the absence of antiphase boundary formation for values of x < 0.50 and the increasing presence of antiphase boundaries for x ≥ 0.5, electrical transport measurements showed interlayer charge transfer initially increased with x , then decreased as x was increased to 0.50 and beyond.