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Flux Crystal Growth of the Ternary Polygermanide LaPtGe 2 , a p‐Type Metal
Author(s) -
Bugaris Daniel E.,
Sturza Mihai,
Han Fei,
Im Jino,
Chung Duck Young,
Freeman Arthur J.,
Kanatzidis Mercouri G.
Publication year - 2015
Publication title -
european journal of inorganic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.667
H-Index - 136
eISSN - 1099-0682
pISSN - 1434-1948
DOI - 10.1002/ejic.201500019
Subject(s) - chemistry , orthorhombic crystal system , hall effect , ternary operation , metal , indium , crystallography , crystal structure , magnetoresistance , electrical resistivity and conductivity , lattice (music) , type (biology) , condensed matter physics , magnetic field , physics , organic chemistry , quantum mechanics , computer science , acoustics , programming language , ecology , biology
Large plate crystals of LaPtGe 2 have been grown by using an inert indium metal flux. This compound crystallizes in the CeNiSi 2 ‐type structure (orthorhombic space group Cmcm ) with lattice parameters a = 4.3770(9) Å, b = 17.186(3) Å, and c = 4.3942(9) Å. The structure of LaPtGe 2 is a three‐dimensional framework with alternating PbO‐type layers of PtGe and infinite Ge chains, separated by La atoms. Electrical resistivity and Hall effect measurements characterize LaPtGe 2 as a metal with holes that act as the charge carriers. Strong temperature dependence of the Hall coefficient and a violation of Kohler's rule (from magnetoresistance data) both indicate possible multiband effects. The electronic structure calculations suggest the metallic nature of LaPtGe 2 and show that the strongest bonding exists between Pt and Ge within the PbO‐type layers.