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Low‐Temperature Synthesis of Highly Crystallized Hexagonal Boron Nitride Sheets with Li 3 N as Additive Agent
Author(s) -
Yuan Sheng,
Toury Bérangère,
Benayoun Stéphane,
Chiriac Rodica,
Gombault François,
Journet Catherine,
Brioude Arnaud
Publication year - 2014
Publication title -
european journal of inorganic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.667
H-Index - 136
eISSN - 1099-0682
pISSN - 1434-1948
DOI - 10.1002/ejic.201402507
Subject(s) - crystallization , raman spectroscopy , hexagonal boron nitride , boron nitride , nitride , chemical engineering , chemistry , nanometre , lithium (medication) , boron , hexagonal crystal system , ceramic , reducing agent , crystallography , materials science , analytical chemistry (journal) , nanotechnology , organic chemistry , layer (electronics) , medicine , graphene , physics , engineering , endocrinology , optics
Highly crystallized hexagonal boron nitride (h‐BN) sheets were obtained by a versatile method modifying the original synthesis by using an additive agent and, as a consequence, decreasing the temperature for the ceramization step (1200–1400 °C). This synthesis is based on the polymer‐derived ceramics (PDCs) route using liquid‐state polyborazylene (PBN) mixed with lithium nitride (Li 3 N) micropowders as additive agent. We have demonstrated that incorporation of Li 3 N as a crystallization promoter allows the onset of crystallization of h‐BN at lower temperatures. Consequently, a high crystallization rate can be obtained from 1000 °C for bulk boron nitride, whereas the temperature has to be 1600–1800 °C under classical conditions. A series of samples incorporating Li 3 N (5 wt.‐%) and annealed at various temperatures from 600 to 1400 °C was prepared and structurally characterized by Raman spectroscopy, XRD analyis, and TEM. Well‐crystallized sheets with thicknesses of nanometers can be easily obtained by applying this method.