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Asymmetric Phase Transitions Observed at the Interface of a Field‐Effect Transistor Based on an Organic Mott Insulator
Author(s) -
Yamamoto Hiroshi M.,
Kawasugi Yoshitaka,
Cui Hengbo,
Nakano Masaki,
Iwasa Yoshihiro,
Kato Reizo
Publication year - 2014
Publication title -
european journal of inorganic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.667
H-Index - 136
eISSN - 1099-0682
pISSN - 1434-1948
DOI - 10.1002/ejic.201402025
Subject(s) - mott insulator , ambipolar diffusion , condensed matter physics , chemistry , mott transition , field effect transistor , metal–insulator transition , doping , drop (telecommunication) , transistor , variable range hopping , phase transition , organic superconductor , superconductivity , electron , metal , voltage , conductivity , electrical engineering , physics , engineering , organic chemistry , quantum mechanics , hubbard model
A high‐quality field‐effect transistor (FET) with an organic Mott insulating channel was fabricated, and its low‐temperature transport properties were measured at various gate voltages ( V G ). The resistance of the FET showed a clear ambipolar field effect as well as a sudden drop in both the p‐type and n‐type regions, the areas of which merged into one at lower temperatures. These drops in the resistance were attributed to Mott transitions that were induced by electrostatic doping into the FET interface. The n‐type transition started to appear at higher temperatures but showed a relatively narrow V G range relative to that of the p‐type transition. These results are suggestive of electron–hole asymmetry of the Mott‐insulator‐to‐metal or Mott‐insulator‐to‐superconductor transitions in the doped organic correlated materials. A strain on the device was also evaluated by X‐ray diffraction.