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Intermediates in Ammonothermal GaN Crystal Growth under Ammonoacidic Conditions
Author(s) -
Zhang Shiyu,
Hintze Frauke,
Schnick Wolfgang,
Niewa Rainer
Publication year - 2013
Publication title -
european journal of inorganic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.667
H-Index - 136
eISSN - 1099-0682
pISSN - 1434-1948
DOI - 10.1002/ejic.201301247
Subject(s) - chemistry , gallium , supercritical fluid , ammonia , crystal growth , cover (algebra) , gallium nitride , crystal (programming language) , inorganic chemistry , nanotechnology , crystallography , organic chemistry , layer (electronics) , mechanical engineering , engineering , programming language , materials science , computer science
Invited for the cover of this issue is the group of Rainer Niewa from the Institute of Inorganic Chemistry of the University of Stuttgart. The cover image illustrates several gallium‐containing species as possible intermediates of GaN crystal growth in supercritical ammonia under ammonoacidic conditions as well as crystals of solid compounds recovered from ammonia.