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Self‐Assembly and the Properties of a Highly Oriented Hierarchical Nanobelt–Nanoprism Array of Ternary Oxide Zn–In–O
Author(s) -
Pan Nan,
Xue Haizhou,
Huang Jinhua,
Zhang Guanghui,
Wu Yukun,
Li Ming,
Wang Xiaoping,
Hou Jianguo
Publication year - 2010
Publication title -
european journal of inorganic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.667
H-Index - 136
eISSN - 1099-0682
pISSN - 1434-1948
DOI - 10.1002/ejic.201000465
Subject(s) - nanorod , stacking , cathodoluminescence , nanostructure , chemistry , superlattice , ternary operation , nanotechnology , substrate (aquarium) , hydrothermal circulation , optoelectronics , chemical engineering , materials science , luminescence , oceanography , organic chemistry , geology , computer science , engineering , programming language
A highly oriented, well‐aligned hierarchical Zn–In–O nanobelt–nanoprism array was synthesized by vapor‐phase transport and condensation using GaN epilayer as the substrate. The upper nanobelts are found to be ZnO:In with an average Zn/In molar ratio of approximately 9:1, and the subjacent nanoprisms are found to be In 2 O 3 (ZnO) m ( m = 2, 3, 4, and 5) structures. During self‐assembly, the nanoprisms are vertically grown on GaN and well aligned along the superlattice stacking direction, upon which each nanobelt is horizontally grown along its [10–10] direction. The spatially resolved cathodoluminescence spectra collected on individual hierarchical nanostructures clearly show characteristics for the ZnO:In nanobelt and for the In 2 O 3 (ZnO) m nanoprism, which are distinctly different from the emissions of the undoped ZnO nanorod. I ‐ V measurements on individual nanobelts reveal good conductivity over 10 3 S m –1 and high electron concentration of 10 19 –10 20 cm –3 . This bottom‐up self‐assembled, highly oriented, and well‐aligned hierarchical nanoarray may find applications in newly emerging vertically integrated nanoarray circuits.