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Volatile, Monomeric, and Fluorine‐Free Precursors for the Metal Organic Chemical Vapor Deposition of Zinc Oxide
Author(s) -
Bekermann Daniela,
Rogalla Detlef,
Becker HansWerner,
Winter Manuela,
Fischer Roland A.,
Devi Anjana
Publication year - 2010
Publication title -
european journal of inorganic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.667
H-Index - 136
eISSN - 1099-0682
pISSN - 1434-1948
DOI - 10.1002/ejic.200901037
Subject(s) - chemistry , zinc , chemical vapor deposition , inorganic chemistry , sublimation (psychology) , thermogravimetric analysis , rutherford backscattering spectrometry , stoichiometry , scanning electron microscope , metal , analytical chemistry (journal) , crystallography , organic chemistry , materials science , ion , psychology , composite material , psychotherapist
Two new bis(ketoiminato)zinc(II) compounds that show excellent precursor properties for the chemical vapor deposition (CVD) of zinc oxide materials are presented. The synthesis of the ketoiminato zinc complexes [Zn{[(CH 2 ) x OCH 3 ]NC(CH 3 )=C(H)C(CH 3 )=O} 2 ] ( 1 : x = 2; 2 : x = 3) is straightforward and can easily be scaled up. Compounds 1 and 2 were analyzed by 1 H and 13 C NMR spectroscopy, elemental analysis, single‐crystal X‐ray diffraction analysis, and electron ionization mass spectrometry. The compounds exist as monomers with a distorted tetrahedral zinc center. Thermogravimetric studies, sublimation, and solubility tests reveal very promising properties for metal–organic CVD related applications. Preliminary metal–organic CVD experiments with the use of compound 1 were performed as a screening for the suitability of the new bis(ketoiminato)zinc complexes as precursors for the growth of ZnO thin films in the presence of oxygen. The films were characterized by X‐ray diffraction, scanning electron microscopy, energy dispersive analysis of X‐ray, and Rutherford backscattering measurements. The as‐deposited ZnO films were stoichiometric; the crystalline films exhibited strong preferred orientation along the c ‐axis.