Laser CVD of Nanodisperse Ge–Sn Alloys Obtained by Dielectric Breakdown of SnH 4 /GeH 4  Mixtures | Zendy

Křenek Tomáš | Zendy; Bezdička Petr | Zendy; Murafa Nataliya | Zendy; Šubrt Jan | Zendy; Pola Josef | Zendy

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Laser CVD of Nanodisperse Ge–Sn Alloys Obtained by Dielectric Breakdown of SnH 4 /GeH 4 Mixtures

Author(s) -

Křenek Tomáš,

Bezdička Petr,

Murafa Nataliya,

Šubrt Jan,

Pola Josef

Publication year - 2009

Publication title -

european journal of inorganic chemistry

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.667

H-Index - 136

eISSN - 1099-0682

pISSN - 1434-1948

DOI - 10.1002/ejic.200801172

Subject(s) - germane , chemistry , raman spectroscopy , stannane , tin , amorphous solid , dielectric , germanium , chemical vapor deposition , germanium compounds , analytical chemistry (journal) , crystallography , silicon , materials science , stereochemistry , optoelectronics , optics , physics , organic chemistry , chromatography

TEA CO 2 laser‐induced dielectric breakdown of an equimolar mixture of gaseous stannane and germane in Ar allows decomposition of both metal hydrides and chemical vapour deposition of the nanostructured Ge/Sn films. Analysis of the films by FTIR and Raman spectroscopy, X‐ray diffraction analysis and electron microscopy revealed nanoregions of crystalline Sn and Sn‐rich Ge/Sn alloys surrounded by an amorphous Ge/Sn phase. The crystalline Ge/Sn nanoalloys contain different amounts of Sn incorporated into the Ge lattice and undergo changes in composition at temperatures as low as 200 °C.(© Wiley‐VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2009)

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