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Laser CVD of Nanodisperse Ge–Sn Alloys Obtained by Dielectric Breakdown of SnH 4 /GeH 4 Mixtures
Author(s) -
Křenek Tomáš,
Bezdička Petr,
Murafa Nataliya,
Šubrt Jan,
Pola Josef
Publication year - 2009
Publication title -
european journal of inorganic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.667
H-Index - 136
eISSN - 1099-0682
pISSN - 1434-1948
DOI - 10.1002/ejic.200801172
Subject(s) - germane , chemistry , raman spectroscopy , stannane , tin , amorphous solid , dielectric , germanium , chemical vapor deposition , germanium compounds , analytical chemistry (journal) , crystallography , silicon , materials science , stereochemistry , optoelectronics , optics , physics , organic chemistry , chromatography
TEA CO 2 laser‐induced dielectric breakdown of an equimolar mixture of gaseous stannane and germane in Ar allows decomposition of both metal hydrides and chemical vapour deposition of the nanostructured Ge/Sn films. Analysis of the films by FTIR and Raman spectroscopy, X‐ray diffraction analysis and electron microscopy revealed nanoregions of crystalline Sn and Sn‐rich Ge/Sn alloys surrounded by an amorphous Ge/Sn phase. The crystalline Ge/Sn nanoalloys contain different amounts of Sn incorporated into the Ge lattice and undergo changes in composition at temperatures as low as 200 °C.(© Wiley‐VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2009)