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Sc 3 AlN – A New Perovskite
Author(s) -
Höglund Carina,
Birch Jens,
Beckers Manfred,
Alling Björn,
Czigány Zsolt,
Mücklich Arndt,
Hultman Lars
Publication year - 2008
Publication title -
european journal of inorganic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.667
H-Index - 136
eISSN - 1099-0682
pISSN - 1434-1948
DOI - 10.1002/ejic.200701356
Subject(s) - nanoindentation , chemistry , elastic recoil detection , crystallography , transmission electron microscopy , perovskite (structure) , stoichiometry , elastic modulus , ternary operation , lattice constant , sputter deposition , electron diffraction , phase (matter) , thin film , max phases , diffraction , sputtering , nanotechnology , materials science , metallurgy , composite material , optics , physics , organic chemistry , computer science , programming language
Sc 3 AlN with perovskite structure has been synthesized as the first ternary phase in the Sc–Al–N system. Magnetron sputter epitaxy at 650 °C was used to grow single‐crystal, stoichiometric Sc 3 AlN(111) thin films onto MgO(111) substrates with ScN(111) seed layers as shown by elastic recoil detection analysis, X‐ray diffraction, and transmission electron microscopy. The Sc 3 AlN phase has a lattice parameter of 4.40 Å, which is in good agreement with the theoretically predicted 4.42 Å. Comparisons of total formation energies show that Sc 3 AlN is thermodynamically stable with respect to all known binary compounds. Sc 3 AlN(111) films of 1.75 µm thickness exhibit a nanoindentation hardness of 14.2 GPa, an elastic modulus of 249 GPa, and a room‐temperature electrical resistivity of 41.2 µΩ cm. (© Wiley‐VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2008)