Open AccessAir‐Stable, Eco‐Friendly RRAMs Based on Lead‐Free Cs 3 Bi 2 Br 9 Perovskite Quantum Dots for High‐Performance Information Storage
Author(s) -
Cao Xiaofei,
Ma Zhuangzhuang,
Cheng Teng,
Wang Yadong,
Shi Zhifeng,
Wang Jizheng,
Zhang Li
Publication year - 2023
Publication title -
energy and environmental materials
Language(s) - English
Resource type - Journals
ISSN - 2575-0356
DOI - 10.1002/eem2.12419
Subject(s) - quantum dot , materials science , optoelectronics , perovskite (structure) , nanotechnology , resistive random access memory , switching time , voltage , electrical engineering , chemical engineering , engineering
Development of lead‐free halide perovskites that are innocuous and stable has become an attractive trend in resistive random access memory (RRAM) fields. However, their inferior memory properties compared with the lead‐based analogs hinder their commercialization. Herein, the lead‐free Cs 3 Bi 2 Br 9 perovskite quantum dot (PQD)‐based RRAMs are reported with outstanding memory performance, where Cs 3 Bi 2 Br 9 quantum dots (QDs) are synthesized via a modified ligand‐assisted recrystallization process. This is the first report of applying Cs 3 Bi 2 Br 9 QDs as the switching layer for RRAM device. The Cs 3 Bi 2 Br 9 QD device demonstrates nonvolatile resistive switching (RS) effect with large ON/OFF ratio of 10 5 , low set voltage of −0.45 V, as well as good reliability, reproducibility, and flexibility. Concurrently, the device exhibits the notable tolerance toward moisture, heat and light illumination, and long‐term stability of 200 days. More impressively, the device shows the reliable light‐modulated RS behavior, and therefrom the logic gate operations including “AND” and “OR” are implemented, foreboding its prospect in logic circuits integrated with storage and computation. Such multifunctionality of device could be derived from the unique 2D layered crystal structure, small particle size, quantum confinement effect, and photoresponse of Cs 3 Bi 2 Br 9 QDs. This work provides the strategy toward the high‐performance RRAMs based on stable and eco‐friendly perovskites for future applications.