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Study of space‐charge characteristics in polyethylene for power cable insulation by laser‐induced pressure‐pulse technique
Author(s) -
Yoshifuji Naohisa,
Suzuoki Yasuo,
Han Sangok,
Matsukawa Youji,
Furuta Tetsuya,
Yamada Hironori,
Mizutani Teruyoshi,
Ieda Masayuki
Publication year - 1992
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/eej.4391120704
Subject(s) - low density polyethylene , space charge , materials science , polyethylene , cathode , anode , electron , analytical chemistry (journal) , electrode , composite material , electrical engineering , chemistry , organic chemistry , physics , quantum mechanics , engineering
By utilizing the laser induced pressure‐pulse (LIPP) technique, the behavior of space charge in low‐density polyethylene (LDPE) and crosslinked polyethylene (XLPE) films in contact with metal or carbon‐loaded semiconducting layers was studied quantitatively to clarify the space‐charge characteristics in power cables. Negative heterospace charge near the anode and positive space charge in the bulk were observed in unoxidized LDPE under the fields above 120 kV/mm. The amount of negative space charge increased with applied field, while positive space charge in the bulk disappeared with increasing applied field. This indicates that electron injection and ionization are enhanced by applied field. Prominent negative homospace charge was formed near the cathode in oxidized LDPE, which indicates that oxidation enhanced electron injection. The depth of charge centroid from the cathode became larger with increasing temperature. This indicates that the effective electron mobility increases with temperature. Negative space charge also was formed in the bulk in XLPE films with metal electrodes, which indicates that crosslinking enhanced electron injection. XLPE films with a carbon‐loaded semiconducting layer showed both negative and positive homospace charges near the semiconducting layers, which indicates that both electrons and holes were injected from the semiconducting layer.