Electrical properties of TiO 2  thin films prepared by the sol‐gel method | Zendy

Yoshimura Noboru | Zendy; Itoi Masashi | Zendy; Sato Shigeki | Zendy; Taguchi Haruo | Zendy

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Electrical properties of TiO 2 thin films prepared by the sol‐gel method

Author(s) -

Yoshimura Noboru,

Itoi Masashi,

Sato Shigeki,

Taguchi Haruo

Publication year - 1992

Publication title -

electrical engineering in japan

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.136

H-Index - 28

eISSN - 1520-6416

pISSN - 0424-7760

DOI - 10.1002/eej.4391120502

Subject(s) - anatase , materials science , sol gel , electrical resistivity and conductivity , alkoxide , titanium , thin film , metal , crystal structure , phase (matter) , chemical engineering , inorganic chemistry , mineralogy , analytical chemistry (journal) , metallurgy , crystallography , nanotechnology , organic chemistry , chemistry , catalysis , photocatalysis , engineering , electrical engineering

A TiO 2 thin film was prepared by the sol‐gel method using a metal alkoxide [Ti(O‐i‐Pr) 4 tetrasopropoxy titanium: TIPT]. The crystalline form of the film depends on the preparation conditions and the heat treatment temperature. When the ratio (γ) of H 2 O to TIPT is 7, the crystalline phase is formed at 400°C; when γ = 2 it is formed at 500°C. The anatase crystal structure was obtained for both γ = 2 and γ = 7. The electrical conductivity of the TiO 2 film increased with the heat treatment temperature.

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