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Electrical properties of TiO 2 thin films prepared by the sol‐gel method
Author(s) -
Yoshimura Noboru,
Itoi Masashi,
Sato Shigeki,
Taguchi Haruo
Publication year - 1992
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/eej.4391120502
Subject(s) - anatase , materials science , sol gel , electrical resistivity and conductivity , alkoxide , titanium , thin film , metal , crystal structure , phase (matter) , chemical engineering , inorganic chemistry , mineralogy , analytical chemistry (journal) , metallurgy , crystallography , nanotechnology , organic chemistry , chemistry , catalysis , photocatalysis , engineering , electrical engineering
A TiO 2 thin film was prepared by the sol‐gel method using a metal alkoxide [Ti(O‐i‐Pr) 4 tetrasopropoxy titanium: TIPT]. The crystalline form of the film depends on the preparation conditions and the heat treatment temperature. When the ratio (γ) of H 2 O to TIPT is 7, the crystalline phase is formed at 400°C; when γ = 2 it is formed at 500°C. The anatase crystal structure was obtained for both γ = 2 and γ = 7. The electrical conductivity of the TiO 2 film increased with the heat treatment temperature.