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Impurity doping effect of molecular‐beam epitaxial GaAs films
Author(s) -
Naganuma M.,
Takahashi K.
Publication year - 1974
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/eej.4390940503
Subject(s) - molecular beam epitaxy , impurity , doping , engineering physics , epitaxy , citation , library science , materials science , physics , electrical engineering , condensed matter physics , nanotechnology , engineering , computer science , quantum mechanics , layer (electronics)
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