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Study of SiC device for pulsed power switching circuit
Author(s) -
Tagawa Toru,
Yamashita Tomohiko,
Sakugawa Takashi,
Katsuki Sunao,
Hukuda Kenzi,
Sakamoto Kunihiro
Publication year - 2019
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/eej.23242
Subject(s) - materials science , switching time , silicon carbide , mosfet , pulsed power , fast switching , voltage , power semiconductor device , electrical engineering , power mosfet , power (physics) , optoelectronics , engineering , transistor , physics , quantum mechanics , metallurgy
Pulsed power generator using semiconductor switches have been developed. We have developed switching module using discrete type Silicon Carbide (SiC) Device for pulsed power circuit. We compare the switching module using SiC‐MOSFETs with conventional module using IGBTs. Both of switching devices the switching loss increased when the voltage get higher. The switching module using SiC‐MOSFETs can input higher voltage and has less switching loss in same input voltage. Also, we have investigate the switching loss depend on di/dt at switching. The permissible di/dt of SiC‐MOSFETs was higher than IGBTs. However, there is a limit to the value of permissible di/dt. The loss in this module is reduced by applying magnetic assist. The advantage of SiC‐MOSFET was confirmed in switching for pulsed power.