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Analysis of Dislocation Structures in 4H‐SiC by Synchrotron X‐Ray Topography
Author(s) -
MATSUHATA HIROHUMI,
YAMAGUCHI HIROTAKA,
SEKIGUCHI TAKASHI,
CHEN BIN,
SASAKI MASAYUKI,
OHNO TOSHIYUKI,
SUZUKI TAKUMA,
HATAKEYAMA TETSUO,
TSUJI TAKASHI,
YONEZAWA YOSHIYUKI,
ARAI KAZUO
Publication year - 2016
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/eej.22871
Subject(s) - materials science , wafer , dislocation , stacking , fabrication , silicon carbide , synchrotron , optoelectronics , stacking fault , basal plane , lattice (music) , condensed matter physics , crystallography , composite material , optics , medicine , chemistry , physics , alternative medicine , nuclear magnetic resonance , pathology , acoustics
SUMMARY Current 4H‐SiC wafers contain certain amount of dislocations, stacking faults, and other lattice‐defects. These defect structures evolve during various processes for power device fabrication. It is very important to examine evolutions of dislocation structures during power device processes, as well as the effect of dislocations on performances of fabricated power devices. Since lattice defects can be observed at only subsurface regions selectively by Berg–Barrett X‐ray topography, we have applied this useful observation technique to 4H‐SiC technology to solve various technological issues. Appearances of scratch‐like surface morphology after epi‐film growth on very flat substrate surface by chemomechanically polish were examined by this technique, and the mechanism was discussed. Analyses of dislocation structure evolutions during epi‐film growth and also basal‐plane dislocation glide by recombination of electrons and holes were discussed. Effects of threading‐screw dislocations on reliability of MOS structures and on current leakage in pn‐junction under reversed bias condition were investigated and discussed. Various important suggestions for 4H‐Sic industries were obtained.