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Iron Loss Characteristics of Electrical Steel Sheet under Inverter Excitation by Power Semiconductor with Extremely Low On‐Voltage Property
Author(s) -
ODAWARA SHUNYA,
KAYAMORI DAISUKE,
FUJISAKI KEISUKE
Publication year - 2016
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/eej.22792
Subject(s) - materials science , insulated gate bipolar transistor , inverter , power semiconductor device , semiconductor , pulse width modulation , mosfet , voltage , excitation , optoelectronics , electrical engineering , power (physics) , transistor , engineering , physics , quantum mechanics
SUMMARY In this study, it is demonstrated that the iron loss from the SiC‐MOSFET, which represents a new power semiconductor with an extremely low on‐voltage for electric machine drives, is almost the same as that from an Si‐IGBT, which is a conventional power semiconductor. In order to evaluate the iron loss characteristics when an SiC device is used, two single‐phase pulse width modulation inverters were built and used for the excitation of a ring made up of electrical steel sheet. One of the inverter employed an SiC‐MOSFET, and the other inverter employed an Si‐IGBT. The iron losses for the two inverters are compared.