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Development of High‐Power Density Interleaved dc/dc Converter with SiC Devices
Author(s) -
KITAMURA TATSUYA,
YAMADA MASAKI,
HARADA SHIGEKI,
KOYAMA MASATO
Publication year - 2016
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/eej.22748
Subject(s) - materials science , power density , electrical engineering , power (physics) , forward converter , power mosfet , silicon carbide , flyback converter , power semiconductor device , optoelectronics , boost converter , electronic engineering , mosfet , engineering , voltage , transistor , physics , composite material , quantum mechanics
SUMMARY We developed an interleaved dc/dc converter with SiC devices. We applied full‐SiC modules including MOSFETs and SBDs to the interleaved dc/dc converter to achieve a high‐power density. An SiC has a high temperature resistance, which facilitates an improvement in high‐frequency drives. We achieved a high‐power density by utilizing this high temperature resistance. We also fabricated a prototype and tested it with loads up to 65 kW.