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Measurement of voltage‐dependent capacitance using a TDR system
Author(s) -
Ariga ZenNosuke,
Wada Keiji,
Shimizu Toshihisa
Publication year - 2012
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/eej.21289
Subject(s) - datasheet , capacitance , jfet , reflectometry , electrical engineering , mosfet , electronic engineering , voltage , noise (video) , bootstrapping (finance) , materials science , engineering , computer science , time domain , physics , transistor , field effect transistor , mathematics , electrode , quantum mechanics , econometrics , computer vision , artificial intelligence , image (mathematics)
The measurement of circuit parameters and the evaluation of equivalent circuit models are necessary for noise analysis or high‐speed operation circuit design for power electronics circuits. Recently, time domain reflectometry (TDR) has emerged as a technique for measuring circuit parameters. This paper proposes a TDR method for measuring the voltage‐dependent capacitance of a power MOSFET. This method can be used to measure the output capacitance C oss of a MOSFET for any DC bias voltage. The C oss of a MOSFET with V DS = 350 V was measured in an experiment, while the datasheet gives values of C oss only for V DS values in the range of 35 to 100 V. © 2012 Wiley Periodicals, Inc. Electr Eng Jpn, 181(3): 31‐38, 2012; Published online in Wiley Online Library ( wileyonlinelibrary.com ). DOI 10.1002/eej.21289