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Development of a low‐noise IGBT module
Author(s) -
Tamate Michio,
Sasaki Tamiko,
Toba Akio,
Takubo Hiromu,
Pasan Fernand,
Okamoto Kenji
Publication year - 2010
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/eej.20971
Subject(s) - insulated gate bipolar transistor , electrical engineering , capacitance , parasitic capacitance , inverter , emi , noise (video) , engineering , leakage (economics) , electromagnetic interference , voltage , electronic engineering , computer science , physics , electrode , quantum mechanics , artificial intelligence , economics , image (mathematics) , macroeconomics
High‐frequency leakage current that may cause serious conducted EMI problems flows through an inverter system. The paths of the leakage current are stray capacitances that are formed inside of motors, cables, and IGBT modules. This paper proposes a new IGBT module that realizes low conducted emission noise by flipping the IGBT chip of the lower‐voltage side to decrease its stray capacitance. The leakage current flowing through the low‐noise IGBT module becomes small, since the stray capacitance is a main path of the current. Through an experiment, it is clarified that the conducted emission level is reduced by 13 dB at a maximum when the low‐noise IGBT module is applied to a resonant‐type inverter. © 2010 Wiley Periodicals, Inc. Electr Eng Jpn, 171(4): 45–52, 2010; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20971