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Structure analysis of self‐assembled ErSi 2 nanowires formed on Si (110) substrates
Author(s) -
Katayama Yusuke,
Watanabe Ryouki,
Kobayashi Tomohiro,
Meguro Takashi,
Zhao Xinwei
Publication year - 2009
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/eej.20790
Subject(s) - nanowire , materials science , annealing (glass) , substrate (aquarium) , nanotechnology , crystallography , optoelectronics , composite material , chemistry , oceanography , geology
The ErSi 2 nanowires were formed on Si(110) substrates by a self‐assembled growth process without a high vacuum system. All of the nanowires were highly parallel and along the Si [1‐10] direction. It was shown by structural analysis that the nanowires consisted of two types, which displayed a similar surface morphology. The first type is ErSi 2 nanowires buried into the Si substrate at a depth of 30 mm, and the other is ErSi 2 thin layers covering a wire‐like Si surface. The latter is suggested to be the remaining structure after evaporation of the first type wires during high‐temperature annealing. © 2009 Wiley Periodicals, Inc. Electr Eng Jpn, 167(3): 58–62, 2009; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20790