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Formation of DLC films by three‐dimensional ion implantation under high vacuum
Author(s) -
Tamba Moritake,
Saitou Takahiro,
Ikegami Yuji,
Suzuki Yoshiaki,
Kobayashi Tomohiro,
Tokuchi Akira,
Katayama Takeshi
Publication year - 2007
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/eej.20444
Subject(s) - materials science , ion , diamond like carbon , raman spectroscopy , plasma , carbon fibers , raman scattering , ion implantation , spectral line , carbon film , atomic physics , analytical chemistry (journal) , optics , thin film , nanotechnology , composite material , chemistry , composite number , physics , nuclear physics , organic chemistry , chromatography , astronomy
Using a modified loop antenna, RF plasmas are formed under high vacuum without collisions between neutral atoms and a test piece or a target (Si) that is mounted in the plasma. By applying a negative high voltage to the target, carbon ions are implanted into the target by the three‐dimensional ion implantation method. Films thus formed have been identified as DLC (diamond‐like carbon) by Raman spectra, X‐ray diffractometry, and Rutherford back scattering. In the case of a target of WC with 10% Co, it has been found that the sticking force of the film is 60 N and the friction coefficient 0.13. © 2006 Wiley Periodicals, Inc. Electr Eng Jpn, 158(3): 1–11, 2007; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20444