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Investigation of spatial profile control of electron density in the rectangular‐type surface wave plasma apparatus with multiple dielectric windows
Author(s) -
Toba Takayuki,
Itagaki Toshifumi,
Katsurai Makoto
Publication year - 2007
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/eej.20443
Subject(s) - plasma , microwave , materials science , dielectric , electron density , optics , electron , conductor , surface (topology) , window (computing) , optoelectronics , physics , geometry , composite material , computer science , mathematics , operating system , quantum mechanics
A surface wave plasma (SWP) processing apparatus has been permitted to generate high‐density and uniform plasmas via a 2.45‐GHz microwave without external magnetic fields. To enlarge the processing area of the SWP apparatus, a special configuration was investigated for a rectangular‐type surface wave plasma apparatus that is equipped with multiple dielectric windows. The experimental investigation of the discharge characteristics of this apparatus with four windows (each 10 cm by 10 cm) has been carried out. To improve electron density uniformity, two methods have been surveyed. One is to insert quartz plates in grooves between metallic window frames of the chamber to make the boundary surface between plasma flat, and the other is to place parallel conductor plates on the window surface. The combination of these methods permits the reduction of nonuniformity of the spatial distribution of the electron density to less than ±6%. © 2007 Wiley Periodicals, Inc. Electr Eng Jpn, 158(4): 1– 10, 2007; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20443

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