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Effective sticking coefficient measurement of radicals for a‐SIN:H film growth in plasma CVD
Author(s) -
Fujikake Shinji,
Narita Masataka,
Ichikawa Yukimi
Publication year - 2006
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/eej.20343
Subject(s) - radical , wafer , trench , sticking coefficient , materials science , silicon nitride , analytical chemistry (journal) , monte carlo method , silicon , plasma , amorphous silicon , composite material , nanotechnology , chemistry , optoelectronics , organic chemistry , physics , nuclear physics , crystalline silicon , mathematics , statistics , layer (electronics) , adsorption , desorption
The reaction coefficients of radicals on the growing surface of hydrogenated amorphous silicon nitride (a‐SiN:H) were studied by applying Monte Carlo simulation. These a‐SiN:H films were deposited on trench‐patterned silicon wafers using two kinds of gas mixture, SiH 4 −NH 3 and SiH 4 −N 2 , and then measured for their film thickness profiles and composition on the trench wall. The derived total loss coefficient, β, of radicals was estimated from comparison between the experimental results and the simulation. On the basis of these results, the main radicals during depositions will be discussed. © 2006 Wiley Periodicals, Inc. Electr Eng Jpn, 156(3): 9– 15, 2006; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20343